B. Pracek
Institut za elektroniko in
vakuumsko tehniko
1111 Ljubljana, Teslova 30
Raziskali smo zacetno stopnjo oksidacije na povrsini cistega
svinca in zlitine InPb med in po izpostavi kisikovi atmosferi v
podrocju od 0.6 x 10 4 do 9 x 10 4 L pri temperaturah 298 K in 423
K. Vpeljana eksperimentalna metoda in AES profilna analiza
omogocata spremljanje rasti zelo tankih plasti in oceno njihove
debeline (reda velikosti 1 nanometer in vec), kar je pomembno za
tehnologijo spajanja optoelektronskih in elektronskih sestavnih
delov.
Kljucne besede: AES profilna analiza, oksidacija Pb, InPb
The initial phase of surface oxidation on the pure Pb and InPb
alloy (20at.% In, 80 at.% Pb) was studied. The surface of Pb and
PbIn alloy was exposed to pure oxygen in the range of 0.6 x 10 4
to 9 x 10 4 L at the temperatures of 298 K and 423 K. An
experimental method based on AES was applied. This method enables
the study of very thin films growth and determination of the
thickness in the range 1 nanometer or more.
Key words: AES depth profile analysis, oxidation Pb, InPb