P. Panjan, B. Navinsek, IJS Ljubljana
A. Zalar, Institut za elektroniko in vakuumsko tehniko, Ljubljana
Tankim plastem silicija in niklja smo med segrevanjem s stalno
hitrostjo 3 stopinj C/min v cevni peci v pretoku argona in-situ (sproti)
merili elektricno upornost. Opazovali smo odvisnost poteka
reakcij od zacetnega razmerja obeh elementov in od debeline
plasti niklja. Po toplotni obdelavi smo vzorce analizirali se z
rentgenskim uklonom ter Augerjevo elektronsko spektroskopijo med
ionskim jedkanjem. Meritve upornosti so dobra osnova za studij
interakcij v tankih plasteh, saj se s spreminjanjem globinskega
prereza ter s kristalizacijo nastalih spojin spreminja tudi
upornost.
Kljucne besede: tanke plasti, elektricna upornost, nikelj,
silicij, temperatura, faze
Electrical Resistivity of Ni/Si bilayers was studied in-situ
during heating at 3 degrees C/min in inert gas at atmospheric pressure in
a tube furnace. The dependence of reactions on the starting
content of both elements and on Ni thickness was studied. After
heat treatment x-ray diffraction and Auger depth profiling were
done. Resistivity measurements form an usefull startpoint to
study interactions in thin films as changes of the resistivity
are connected with changes of the depth profile as well as with a
crystallization of phases.
Key words: thin films, electrical resistivity, nickel, silicon,
temperature, phases